HUMAN RESOURCE MANAGEMENT AS AN ELEMENT OF SUSTAINABLE NUCLEAR POWER PLANT CONSTRUCTION


Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design

Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS.However, DGMOSFETs for subthreshold circuit design have Cable Ducts not been much explored in comparison to those for strong inversion-based desi

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